http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215 2.2a , 150v , r ds(on) 315m ? n-ch enhancement mode power mosfet 25-aug-2015 rev. a page 1 of 5 b l f h c j d g k a e 3 2 1 5 = date code rohs compliant product a suffix of -c specifies halogen and lead-free description the SST3215 provide the designer with the best comb ination of fast switching, low on-resistance and cost-e ffectiveness. the sot-26 package is universally used for al l commercial- industrial surface mount applications. features low on-resistance capable of 2.5v gate drive low drive current marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v t c =25c 2.2 t c =75c 1.8 t a =25c 1.7 continuous drain current, v gs =10v 1 t a =75c i d 1.4 a pulsed drain current 2, 3 i dm 8 a t c =25c 3.2 power dissipation t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating t Q 5sec 62.5 thermal resistance junction to ambient 1 steady state r ja 125 thermal resistance junction to case 1 r jc 39 c / w sot-26 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.4 0 1.80 j 0.12 ref. d 1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 d g d d d s
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215 2.2a , 150v , r ds(on) 315m ? n-ch enhancement mode power mosfet 25-aug-2015 rev. a page 2 of 5 electrical characteristics ( t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 150 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v gs =20v t j =25 c - - 1 drain-source leakage current t j =55 c i dss - - 10 a v ds =120v, v gs =0 240 315 v gs =10v, i d =1.5a drain-source on-resistance 2 r ds(on) - 265 345 m v gs =6v, i d =1.5a forward transconductance g fs - 2.5 - s v ds =15v, i d =1a dynamic total gate charge 2 q g - 7.5 - gate-source charge q gs - 1.5 - gate-drain (miller)charge q gd - 2 - nc v ds =75v, v gs =10v, i d =1.7a turn-on delay time 2 t d(on) - 12 - rise time t r - 16 - turn-off delay time t d(off) - 32 - fall time t f - 17 - ns v ds =75v, v gs =10v, r g =6 , i d =1a input capacitance c iss - 290 - output capacitance c oss - 30 - reverse transfer capacitance c rss - 12 - pf v gs =0v v ds =30v, f=1.0mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1.7a, v gs =0v continuous source current 1, 2 i s - - 1.7 pulsed source current 2, 3 i sm - - 5 a v g =v d =0v, force current reverse recovery time t rr - 44.5 - ns reverse recovery charge q rr - 15.8 - nc i f =1.7a, dl/dt=100a/ s, t j =25c notes: 1. surface mounted on 1 inch 2 copper pad of fr4 board; 156c/w when mounted on m in. copper pad. 2. the data tested by pulsed, pulse width 300 Q s, duty cycle 2% Q 3. the power dissipation is limited by 150c junct ion temperature.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215 2.2a , 150v , r ds(on) 315m ? n-ch enhancement mode power mosfet 25-aug-2015 rev. a page 3 of 5 ratings and characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215 2.2a , 150v , r ds(on) 315m ? n-ch enhancement mode power mosfet 25-aug-2015 rev. a page 4 of 5 ratings and characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST3215 2.2a , 150v , r ds(on) 315m ? n-ch enhancement mode power mosfet 25-aug-2015 rev. a page 5 of 5 ratings and characteristic curves
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